APTGT20TL60T3G APTGT20TL60T3G ? rev0 march, 2009 www.microsemi.com 1-6 q1 to q4 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 32 i c continuous collector current t c = 80c 20 i cm pulsed collector current t c = 25c 40 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 62 w rbsoa reverse bias safe operating area t j = 150c 40a @ 550v these devices are sens itive to electrostatic discharge. prope r handling procedures should be follow ed. see application note apt0502 on www.microsemi.com 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 10/11/12 ; 7/8 ? v ces = 600v i c = 20a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor fo r temperature monitoring benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter trench + field stop igbt power module
APTGT20TL60T3G APTGT20TL60T3G ? rev0 march, 2009 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified q1 to q4 electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 20a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 300a 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 300 na q1 to q4 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1100 c oes output capacitance 70 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 35 pf q g gate charge v ge =15v, i c =20a v ce =300v 0.2 c t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 20a r g = 12 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 20a r g = 12 60 ns t j = 25c 0.11 e on turn-on switching energy t j = 150c 0.2 mj t j = 25c 0.5 e off turn-off switching energy v ge = 15v v bus = 300v i c = 20a r g = 12 t j = 150c 0.7 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 100 a r thjc junction to case thermal resistance 2.4 c/w
APTGT20TL60T3G APTGT20TL60T3G ? rev0 march, 2009 www.microsemi.com 3-6 cr1 to cr6 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 150 i rm maximum reverse leakage current v r =600v t j = 150c 350 a i f dc forward current tc = 80c 20 a t j = 25c 1.6 2 v f diode forward voltage i f = 20a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 150 ns t j = 25c 1.1 q rr reverse recovery charge t j = 150c 2.3 c t j = 25c 0.23 e rr reverse recovery energy i f = 20a v r = 300v di/dt =1600a/s t j = 150c 0.50 mj r thjc junction to case thermal resistance 3.25 c/w temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g t: thermistor temperature r t : thermistor value at t
APTGT20TL60T3G APTGT20TL60T3G ? rev0 march, 2009 www.microsemi.com 4-6 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com q1 to q4 typical performance curve hard switching 0 20 40 60 80 0 5 10 15 20 25 30 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =12 ? t j =150c t c =85c operating frequency vs collector current
APTGT20TL60T3G APTGT20TL60T3G ? rev0 march, 2009 www.microsemi.com 5-6 output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 5 10 15 20 25 30 35 40 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 5 10 15 20 25 30 35 40 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 5 10 15 20 25 30 35 40 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 0.25 0.5 0.75 1 1.25 0 10203040 i c (a) e (mj) v ce = 300v v ge = 15v r g = 12 ? t j = 150c eon eon eoff 0 0.5 1 1.5 10 30 50 70 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 20a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =12 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w)
APTGT20TL60T3G APTGT20TL60T3G ? rev0 march, 2009 www.microsemi.com 6-6 cr1 to cr6 typical performance curve energy losses vs collector current 0 0.2 0.4 0.6 0.8 010203040 i f (a) e (mj) v ce = 300v r g = 12 ? t j = 150c 0 0.125 0.25 0.375 0.5 10 30 50 70 gate resistance (ohms) e (mj) v ce = 300v i c = 20a t j = 150c switching energy losses vs gate resistance forward characteristic of diode t j =25c t j =150c 0 5 10 15 20 25 30 35 40 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.5 1 1.5 2 2.5 3 3.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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